Silicon Nitride Sputtering Target

Cat No:SBM-ISM-0056

Description

This silicon nitride deposition target supplies a controlled ceramic source for PVD processes that create dielectric, protective, optical, or barrier coatings on semiconductor, glass, sensor, and research substrates while supporting repeatable thin-film process development.

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Basic Information

Chemical Formula	Si3N4
Molecular Weight	140.28 g/mol
Appearance	Powder/ceramic/target/wafer/structured solid
Density	3.2 g/cm³
Melting Point	1900°C
Solubility in H2O	Insoluble
Young's Modulus	250-320 GPa
Vickers Hardness	1400-1600 HV
Thermal Conductivity	30 W/mK
Electrical Resistivity	Semiconductor/insulator
Electronegativity (Pauling)	1.90
Hazard Statements	Dust hazard depending on form
Hazard Codes	GHS07
Precautionary Statements	Avoid inhalation
Transport Information	Transportation classification depends on the product form.
Packaging Specification	Powder, target, wafer, ceramic parts, fiber or custom packaging

Applications

Dielectric Film Formation: Deposits electrically insulating layers for electronic structures. Optical Stack Engineering: Supports nitride layers with useful refractive properties. Surface Protection: Produces hard coatings for selected substrates. Thin-Film Research: Enables controlled studies of nitride composition and process conditions.

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Eata Silicon delivers a diverse portfolio of silicon-based materials, from high-purity silicon and inorganic silicon compounds to functional silicon materials and customized solutions, supporting research, manufacturing, and next-generation applications across multiple industries.

For Research or Industrial Raw Materials, Not For Personal Medical Use!